MacLaren, I. and Richter, G. (2009) The structure and possible origins of stacking faults in gamma-yttrium disilicate. Philosophical Magazine, 89(2), pp. 169-181. (doi: 10.1080/14786430802562132)
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Abstract
Parallel stacking faults on (010) planes are frequently observed in hot-pressed Y2Si2O7. A combination of conventional dark-field imaging and high-resolution transmission electron microscopy was used to investigate the structure of these faults and it was found that they consist of the repeat of one layer of the two layer γ-Y2Si2O7 structure with an associated in-plane rigid body displacement. The resulting structure was confirmed by image simulation of high-resolution images from two perpendicular projections. A model for the formation of the stacking faults is proposed as a consequence of a transformation from β-Y2Si2O7 to γ-Y2Si2O7 in the hot pressing.
Item Type: | Articles |
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Additional Information: | The full text of this document is not available until January 2010 due to publishers embargo. |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | MacLaren, Dr Ian |
Authors: | MacLaren, I., and Richter, G. |
Subjects: | T Technology > TN Mining engineering. Metallurgy Q Science > QC Physics |
College/School: | College of Science and Engineering > School of Physics and Astronomy |
Research Group: | Solid State Physics |
Journal Name: | Philosophical Magazine |
Publisher: | Taylor and Francis |
ISSN: | 1478-6435 |
ISSN (Online): | 1478-6443 |
Copyright Holders: | Copyright © 2009 Taylor and Francis |
First Published: | First published in Philosophical Magazine 89(2):169-181 |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher. |
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