Docherty, F.T. , MacKenzie, M., Craven, A.J., McComb, D.W., De Gendt, S., McFadzean, S. and McGilvery, C.M. (2008) A nanoanalytical investigation of elemental distributions in high-k dielectric gate stacks on silicon. Microelectronic Engineering, 85(1), pp. 61-64. (doi: 10.1016/j.mee.2007.03.001)
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Abstract
Two high-<i>k</i> gate stacks with the structure Si/SiO<sub>2</sub>/HfO<sub>2</sub>/TiN/poly-Si are characterised using previous termnanoanalyticalnext term electron microscopy. The effect of two key changes to the processing steps during the fabrication of the stacks is investigated. Electron energy-loss spectroscopy is used to show that the TiN layer has a very similar composition whether it is deposited by PVD or ALD. Spectrum imaging in the electron microscope was used to profile the distribution of elements across the layers in the stack. It was found that when the anneal after HfO<sub>2</sub> deposition is carried out in a NH3 atmosphere instead of an O2 atmosphere, there is diffusion of N into the SiO<sub>2</sub> and HfO<sub>2</sub> layers. There is also significant intermixing of the layers at the interfaces for both wafers.
| Item Type: | Articles |
|---|---|
| Additional Information: | The Third IEEE International Symposium on Advanced Gate Stack Technology |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Docherty, Dr Frances and MacKenzie, Dr Maureen and Craven, Professor Alan and McFadzean, Dr Sam |
| Authors: | Docherty, F.T., MacKenzie, M., Craven, A.J., McComb, D.W., De Gendt, S., McFadzean, S., and McGilvery, C.M. |
| Subjects: | Q Science > QC Physics |
| College/School: | College of Science and Engineering > School of Physics and Astronomy |
| Journal Name: | Microelectronic Engineering |
| Publisher: | Elsevier |
| ISSN: | 0167-9317 |
| Published Online: | 15 March 2007 |
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