Ougazzaden, A. et al. (2008) Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates. Journal of Crystal Growth, 310(5), pp. 944-947. (doi: 10.1016/j.jcrysgro.2007.11.137)
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Publisher's URL: http://dx.doi.org/10.1016/j.jcrysgro.2007.11.137
Abstract
The materials quality and availability of large-area bulk GaN substrates is currently considered a key problem for the continuing development of improved GaN-based devices. Since industrial fabrication of bulk GaN substrates with suitable materials quality has proven very difficult, the opto-GaN industry is currently based on heteroepitaxy using either c-sapphire or 6H SiC substrates. ZnO is promising as a substrate material for GaN because it has the same wurtzite structure and a relatively small lattice mismatch (not, vert, ∼1.8%). In this study, we have successfully grown GaN by MOVPE on ZnO-buffered c-sapphire. The growth conditions required to both prevent ZnO degradation and grow monocrystal thin film of GaN have been obtained. SEM, HRXRD and micro-Raman characterizations underlined the presence of the two layers GaN and ZnO with high structural quality.
Item Type: | Articles |
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Keywords: | A3. MOVPE; B1. GaN; B1. ZnO |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | McGrouther, Dr Damien and Chapman, Professor John |
Authors: | Ougazzaden, A., Rogers, D.J., Hosseini Teherani, F., Moudakir, T., Gautier, S., Aggerstam, T., Ould Saad, S., Martin, J., Djebbour, Z., Durand, O., Garry, G., Lusson, A., McGrouther, D., and Chapman, J.N. |
Subjects: | Q Science > QC Physics |
College/School: | College of Science and Engineering > School of Physics and Astronomy |
Journal Name: | Journal of Crystal Growth |
Publisher: | Elsevier |
ISSN: | 0022-0248 |
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