Si1-xGex pulsed plasma etching using CHF3 and H-2

Paul, D.J. , Law, V.J. and Jones, G.A.C. (1995) Si1-xGex pulsed plasma etching using CHF3 and H-2. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 13(6), pp. 2234-2237. (doi: 10.1116/1.588055)

Abstract

Selective reactive ion etching of Si over Si1−xGex and Si1−xGex over Si has been demonstrated by using a modulation‐frequency, plasma‐etch technique which employs CHF3 and H2 as the etch precursor gases. The selective etch crossover region appears at a modulation frequency of 2–3 Hz for a duty cycle of 50%. It is suggested that the etch selectivity phenomenon arises from the relative ion‐assisted and purely chemical components of the radio frequency plasma and decaying plasma afterglow.

• Item Type: Articles
• Additional Information: The work was supported by the Engineering and Physical Sciences Research Council.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Paul, Professor Douglas
• Authors: Paul, D.J., Law, V.J., and Jones, G.A.C.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Semiconductor Devices
• Journal Name: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
• Publisher: American Institute of Physics
• ISSN: 2166-2746
• ISSN (Online): 2166-2754