Gating high mobility silicon-germanium heterostructures

Griffin, N., Paul, D.J. , Pepper, M., Taylor, S., Smith, J.P., Eccleston, W., Fernandez, J.M. and Joyce, B.A. (1997) Gating high mobility silicon-germanium heterostructures. Microelectronic Engineering, 35(1-4), pp. 309-312. (doi: 10.1016/S0167-9317(96)00137-2)

Abstract

Possible methods for fabricating gates to modulate the carrier density of modulation-doped Si/SiGe two-dimensional electron gas (2DEG) material have been investigated. Plasma anodised oxides with Al gates along with Pt/Al Schottky barriers have demonstrated excellent modulation of the 2DEGs. For the plasma oxides, the subsequent low temperature mobility of the material depended on the thickness of oxide grown relative to the consumption of the capping layers of the Si/SiGe material. For an oxide which just consumes the silicon cap, the gates do not adversely affect the as-grown mobility of the material. The application of a bias to the gates of the thicker oxide samples produced similar mobilites as the ungated wafer when the carrier densities were matched.

• Item Type: Articles
• Additional Information: Micro and Nano Engineering Conference 1996 (MNE 96), Glasgow, Scotland, 22-25 September, 1996
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Paul, Professor Douglas
• Authors: Griffin, N., Paul, D.J., Pepper, M., Taylor, S., Smith, J.P., Eccleston, W., Fernandez, J.M., and Joyce, B.A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Semiconductor Devices
• Journal Name: Microelectronic Engineering
• Publisher: Elsevier
• ISSN: 0167-9317
• ISSN (Online): 1873-5568