Investigations of electron-beam and optical induced damage in high mobility SiGe heterostructures

Paul, D.J. , Ryan, J.H., Kelly, P.V., Crean, G.M., Fernandez, J.M., Pepper, M., Broers, A.N. and Joyce, B.A. (1997) Investigations of electron-beam and optical induced damage in high mobility SiGe heterostructures. Solid-State Electronics, 41(10), pp. 1509-1513. (doi: 10.1016/S0038-1101(97)00097-X)

Abstract

Modulation-doped two dimensional electron gases (2DEGs) grown on Si0.7Ge0.3 virtual substrates were investigated. Low temperature measurements were used to characterise the uniformity of the wafers and annealing studies demonstrated that high annealing temperatures (above 600°C) destroyed the electrical properties. Studies of excimer irradiation of the 2DEG material demonstrated that only surface damage was induced, but the subsequent annealing of this damage reduced the carrier density in the material, suggesting strain relaxation of the strained Si cap. Electron beam irradiation experiments at 40 keV and PMMA doses showed charging effects at room temperature but little damage. Finally a number of narrow channel devices were fabricated using 300 keV electrons and characterised at low temperature to estimate the range of the electron-beam induced damage.

• Item Type: Articles
• Additional Information: 2nd Topical Workshop on Heterostructure Microelectronics (TWHM 96), Sapporo, Japan, 18-21 August, 1996.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Paul, Professor Douglas
• Authors: Paul, D.J., Ryan, J.H., Kelly, P.V., Crean, G.M., Fernandez, J.M., Pepper, M., Broers, A.N., and Joyce, B.A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Semiconductor Devices
• Journal Name: Solid-State Electronics
• Publisher: Elsevier
• ISSN: 0038-1101
• ISSN (Online): 1879-2405