Paul, D.J. (1998) Silicon germanium heterostructures in electronics: the present and the future. Thin Solid Films, 321, pp. 172-180. (doi: 10.1016/S0040-6090(98)00469-6)
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Abstract
A review is presented of Si/Si1−xGex heterostructures which may be used for electronic transistors along with more exotic designs of electrical devices including quantum effect devices. Important issues including integration of the devices with present technology along with defect problems will be presented. The final section will explore exotic quantum devices and review the potential for different SiGe devices to reach the market place.
| Item Type: | Articles (Letter) |
|---|---|
| Additional Information: | 7th International Symposium on Silicon Molecular Beam Epitaxy, Banff, Canada, 13-17 July, 1997. |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas |
| Authors: | Paul, D.J. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Research Group: | Semiconductor Devices |
| Journal Name: | Thin Solid Films |
| Publisher: | Elsevier |
| ISSN: | 0040-6090 |
| ISSN (Online): | 1879-2731 |
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