Norman, C.E., Griffin, N., Arnone, D.D., Paul, D.J. , Pepper, M., Gallas, B. and Fernandez, J.M. (1998) EBIC of strained Si/SiGe 2DEGs showing lateral electron confinement. Solid State Phenomena, 63-4, pp. 25-32. (doi: 10.4028/www.scientific.net/SSP.63-64.25)
Full text not currently available from Enlighten.
Abstract
Modulation-doped SiGe structures containing a two dimensional electron gas (2DEG) in a strained Si channel have been examined by far infrared (FIR), electron beam induced current (EBIC) and transmission electron microscopy (TEM). An apparent correlation between lateral confinement effects and inhomogeneities in the material beneath the Schottky barrier has been identified. These effects are not due to defects nucleating in the Si channel, but rather, may be associated with the defect structure in the underlying relaxed graded-composition buffer layer.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas |
| Authors: | Norman, C.E., Griffin, N., Arnone, D.D., Paul, D.J., Pepper, M., Gallas, B., and Fernandez, J.M. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Research Group: | Semiconductor Devices |
| Journal Name: | Solid State Phenomena |
| Publisher: | Trans Tech Publications |
| ISSN: | 1012-0394 |
| ISSN (Online): | 1662-9779 |
University Staff: Request a correction | Enlighten Editors: Update this record
Deposit and Record Details
Deposit and Record Details