Low-dimensional inverted Si/SiGe modulation-doped electron gases using selective ex-situ ion implantation

Paul, D.J. , Ahmed, A., Churchill, A.C., Robbins, D.J. and Leong, W.Y. (2002) Low-dimensional inverted Si/SiGe modulation-doped electron gases using selective ex-situ ion implantation. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 89(1-3), pp. 111-115. (doi: 10.1016/S0921-5107(01)00812-1)

Abstract

A novel fabrication technique for selectively modulation-doping strained-Si quantum wells on relaxed Si1−xGex substrates to produce field effect transistors and low dimensional devices is demonstrated using standard silicon processing techniques. Strain–relaxed Si1−xGex buffers were selectively ion implanted ex-situ through a lithographically patterned resist before being chemically cleaned and replaced in the growth chamber to regrow a quantum well and cap layers. Mobilities of up to 49,900 cm2 V−1 s−1 for a carrier density of 9.72×1011 cm−2 at 1.7 K for selectively doped Hall bars have been demonstrated along with wires using the technique.

• Item Type: Articles
• Additional Information: Spring Meeting of the European-Materials-Research-Society, Strasbourg, France, 5-8 June, 2001.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Paul, Professor Douglas
• Authors: Paul, D.J., Ahmed, A., Churchill, A.C., Robbins, D.J., and Leong, W.Y.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Semiconductor Devices
• Journal Name: Materials Science and Engineering B: Solid-State Materials for Advanced Technology
• Publisher: Elsevier
• ISSN: 0921-5107
• ISSN (Online): 1873-4944