Bates, R. et al. (2003) Interwell intersubband electroluminescence from Si/SiGe quantum cascade emitters. Applied Physics Letters, 83(20), pp. 4092-4094. (doi: 10.1063/1.1626003)
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Abstract
The quantum cascade laser provides one potential method for the efficient generation of light from indirect materials such as silicon. While to date electroluminescence results from THz Si/SiGe quantum cascade emitters have shown higher output powers than equivalent III–V emitters, the absence of population inversion within these structures has undermined their potential use for the creation of a laser. Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating intersubband emission from heavy to light holes interwell (diagonal) transitions between 1.2 THz (250 μm) and 1.9 THz (156 μm). Theoretical modeling of the transitions suggests the existence of population inversion within the system.
| Item Type: | Articles |
|---|---|
| Additional Information: | This work was funded by U.S. DARPA under Air Force Contract No. F-19628-99-C-0074. |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas |
| Authors: | Bates, R., Lynch, S.A., Paul, D.J., Ikonic, Z., Kelsall, R.W., Harrison, P., Liew, S.L., Norris, D.J., Cullis, A.G., Tribe, W.R., and Arnone, D.D. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Research Group: | Semiconductor Devices |
| Journal Name: | Applied Physics Letters |
| Publisher: | AIP Publishing |
| ISSN: | 0003-6951 |
| ISSN (Online): | 1077-3118 |
| Published Online: | 12 November 2003 |
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