Interwell intersubband electroluminescence from Si/SiGe quantum cascade emitters

Bates, R. et al. (2003) Interwell intersubband electroluminescence from Si/SiGe quantum cascade emitters. Applied Physics Letters, 83(20), pp. 4092-4094. (doi:10.1063/1.1626003)

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The quantum cascade laser provides one potential method for the efficient generation of light from indirect materials such as silicon. While to date electroluminescence results from THz Si/SiGe quantum cascade emitters have shown higher output powers than equivalent III–V emitters, the absence of population inversion within these structures has undermined their potential use for the creation of a laser. Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating intersubband emission from heavy to light holes interwell (diagonal) transitions between 1.2 THz (250 μm) and 1.9 THz (156 μm). Theoretical modeling of the transitions suggests the existence of population inversion within the system.

Item Type:Articles
Additional Information:This work was funded by U.S. DARPA under Air Force Contract No. F-19628-99-C-0074.
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Bates, R., Lynch, S.A., Paul, D.J., Ikonic, Z., Kelsall, R.W., Harrison, P., Liew, S.L., Norris, D.J., Cullis, A.G., Tribe, W.R., and Arnone, D.D.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN (Online):1077-3118
Published Online:12 November 2003

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