Advanced TEM Analysis of Strain-Balanced Si/SiGe Resonant Tunnelling Diode Structures

Chang, A.C.K., Norris, D.J., Cullis, A.G. and Paul, D.J. (2003) Advanced TEM Analysis of Strain-Balanced Si/SiGe Resonant Tunnelling Diode Structures. In: Microscopy of Semiconducting Materials 2003, Cambridge, UK, 31 March - 3 April 2003, pp. 163-166.

Abstract

We present a TEM analysis of a series of Si/SiGe resonant tunnelling diode structures which contain Si1-xGex quantum wells (x of 0.4 and 1.0) grown on a range of (001) Si1-yGey virtual substrates (y of 0.15, 0.2 and 0.3). It is found that the dislocation density in the graded region of the virtual substrate increases with the y parameter, as expected. The subsequent effect of this, however, is to increase the amplitude of RMS roughness of the substrate surface, which ranges from 2.0 to 6.7 rim. Quantum wells with x = 0.4 are found to be highly planar; however, at x = 1.0 the wells undulate significantly due to misfit strain.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Paul, Professor Douglas
• Authors: Chang, A.C.K., Norris, D.J., Cullis, A.G., and Paul, D.J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Semiconductor Devices