Qiu, B., McDougall, S., Yanson, D. and Marsh, J.H. (2009) Analysis of thermal performance of InGaP/InGaAlP quantum wells for high-power red laser diodes. Optical and Quantum Electronics, 40(14-15), pp. 1149-1154. (doi: 10.1007/s11082-009-9314-1)
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Abstract
The effect of quantum well (QW) strain on the thermal performance of In- GaP/InGaAlP lasers emitting at around 635 nm is investigated theoretically. It is found that compressively-strained QWs offer superior thermal performance due to an increased barrier height for electrons, leading to a reduced electron leakage. The theoretical predictions are supported by experimental data from red-emitting laser diodes with an improved characteristic temperature T0.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Marsh, Professor John |
| Authors: | Qiu, B., McDougall, S., Yanson, D., and Marsh, J.H. |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Optical and Quantum Electronics |
| ISSN: | 0306-8919 |
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