Monolithic 40-GHz passively mode-locked AlGaInAs-InP 1.55-mu m MQW laser with surface-etched distributed Bragg reflector

Hou, L. , Dylewicz, R., Haji, M., Stolarz, P., Qiu, B. and Bryce, A.C. (2010) Monolithic 40-GHz passively mode-locked AlGaInAs-InP 1.55-mu m MQW laser with surface-etched distributed Bragg reflector. IEEE Photonics Technology Letters, 22(20), pp. 1503-1505. (doi: 10.1109/LPT.2010.2064764)

Full text not currently available from Enlighten.

Abstract

We have fabricated 40-GHz passively mode-locked AlGaInAs-InP 1.55-mu m lasers integrated with surface-etched distributed Bragg mirrors. Numerically optimized gratings provide low-scattering losses and accurate wavelength control. The lasers produce 4.46-ps Gaussian pulses with time-bandwidth product of 0.47.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Dylewicz, Dr Rafal and Bryce, Prof Ann and Hou, Dr Lianping and Stolarz, Mr Piotr and Haji, Dr Mohsin
Authors: Hou, L., Dylewicz, R., Haji, M., Stolarz, P., Qiu, B., and Bryce, A.C.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Technology Letters
Publisher:Institute of Electrical and Electronics Engineers
ISSN:1041-1135
ISSN (Online):1941-0174
Published Online:10 August 2010

University Staff: Request a correction | Enlighten Editors: Update this record

Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
453111High power, high frequency mode-locked semiconductor lasersAnn BryceEngineering & Physical Sciences Research Council (EPSRC)EP/E065112/1Electronic and Nanoscale Engineering