Logan, D.F., Velha, P., Sorel, M. , De La Rue, R.M. , Knights, A.P. and Jessop, P.E. (2010) Defect-enhanced silicon-on-insulator waveguide resonant photodetector with high sensitivity at 1.55μm. IEEE Photonics Technology Letters, 22(20), pp. 1530-1532. (doi: 10.1109/LPT.2010.2066963)
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Abstract
We describe the fabrication and characterization of a silicon waveguide resonant photodetector compatible with the optical-to-electrical conversion of wavelengths at, or around, 1550 nm. Sub-band responsivity is provided through the introduction of defects via inert self-implantation and subsequent annealing. The detector is located within a 20- m radius silicon microring resonator. An 18-dB resonant enhancement in absorption coefficient and 12-dB enhancement in photocurrent were measured, leading to a resonant responsivity of approximately 39 mA/W at 20-V reverse bias.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Sorel, Professor Marc and De La Rue, Professor Richard and Velha, Mr Philippe |
Authors: | Logan, D.F., Velha, P., Sorel, M., De La Rue, R.M., Knights, A.P., and Jessop, P.E. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Photonics Technology Letters |
Publisher: | IEEE |
ISSN: | 1041-1135 |
Published Online: | 12 August 2010 |
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