Efficient simulation of 6σ VT distribution due to random descrete dopants

Reid, D., Millar, C., Roy, G., Roy, S. and Asenov, A. (2009) Efficient simulation of 6σ VT distribution due to random descrete dopants. In: 10th International Conference on Ultimate Integration of Silicon, 2009. ULIS 2009., Aachen, Germany, 18-20 Mar 2009, pp. 23-26. (doi: 10.1109/ULIS.2009.4897530)

Abstract

Previously published 3D simulations of 10⁵ statistical samples have shown distinct asymmetry in Random Discrete Dopant induced threshold voltage variations in Bulk MOSFETs. Based on detailed statistical analysis of the underlying physical processes that shape such distributions we present a robust method,capable of accurately predicting random discrete dopant induced threshold voltage variation out to 6-7σ from the mean. This methodology can be used to dramatically reduce the computational cost associated with accurately determining the effect of Random Dopant distribution on threshold voltage in bulk MOSFETs.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Millar, Dr Campbell and Reid, Mr David and Roy, Dr Gareth and Roy, Professor Scott and Asenov, Professor Asen
• Authors: Reid, D., Millar, C., Roy, G., Roy, S., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering