Simulation of statistical aspects of reliability in nano CMOS

Bukhori, M.F., Roy, S. and Asenov, A. (2009) Simulation of statistical aspects of reliability in nano CMOS. In: IEEE International Integrated Reliability Workshop (IRW '09), S. Lake Tahoe, CA., U.S.A., 18-22 Oct 2009, pp. 82-85. ISBN 9781424439218 (doi: 10.1109/IRWS.2009.5383028)

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The evolution of the threshold voltage distribution in an ensemble of realistic n- and p- channel bulk MOSFETs caused by charge trapping on stress generated defect states at the Si/SiO<sub>2</sub> interface due to NBTI/PBTI is studied using 3-D statistical simulations. The simulations take into account the underlying random discrete dopant distribution in the transistors, which in conjunction with strategically positioned traps, could result in rare but dramatic changes in the transistor characteristics.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Roy, Professor Scott and Asenov, Professor Asen
Authors: Bukhori, M.F., Roy, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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