Advanced nanoanalysis of a Hf-based high-k dielectric stack prior to activation

MacKenzie, M., Craven, A.J., McComb, D.W., De Gendt, S., Docherty, F.T. , McGilvery, C.M. and McFadzean, S. (2007) Advanced nanoanalysis of a Hf-based high-k dielectric stack prior to activation. Electrochemical and Solid State Letters, 10(6), G33-G35. (doi: 10.1149/1.2718399)

Abstract

Analytical electron microscopy techniques are used to investigate elemental distributions across a high-<i>k</i> dielectric stack with a metal gate. Electron energy-loss spectroscopy results from a Si(100)/SiO2/HfO2/TiN/a-Si gate stack confirm the presence of an oxide interfacial phase at the TiN/a-Si interface prior to activation of the stack.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Docherty, Dr Frances and MacKenzie, Dr Maureen and Craven, Professor Alan and McGilvery, Miss Catriona and McFadzean, Dr Sam
• Authors: MacKenzie, M., Craven, A.J., McComb, D.W., De Gendt, S., Docherty, F.T., McGilvery, C.M., and McFadzean, S.
• Subjects: Q Science > QD Chemistry; Q Science > QC Physics
• College/School: College of Science and Engineering > School of Chemistry; College of Science and Engineering > School of Physics and Astronomy
• Journal Name: Electrochemical and Solid State Letters
• Publisher: The Electrochemical Society
• ISSN: 1099-0062
• Copyright Holders: Copyright © 2007 The Electrochemical Society
• First Published: First published in Electrochemical and Solid-State Letters 10(6):G33-G35
• Publisher Policy: Reproduced with the permission of the publisher

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
35067	1	Chemistry, structure and bonding in high-k gate oxide stacks	Alan Craven	Engineering & Physical Sciences Research Council (EPSRC)	GR/S44280/01	Physics and Astronomy