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Variability studies of a narrow Si nanowire using a full-3D NEGF formalism

Martinez, A. (2009) Variability studies of a narrow Si nanowire using a full-3D NEGF formalism. In: Silicon Nanoelectronics Workshop (SNW 2009), Kyoto, Japan, 13-14 June 2009,

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Martinez, Dr Antonio
Authors: Martinez, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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