Development of Enhancement Mode AlGaN/GaN MOS-HEMTs using Localized Gate-Foot Oxidation

Banerjee, A., Taking, S., MacFarlane, D., Dabiran, A. and Wasige, E. (2010) Development of Enhancement Mode AlGaN/GaN MOS-HEMTs using Localized Gate-Foot Oxidation. In: The 5th European Microwave Integrated Circuits Conference, Proceedings, France, 26th Sept – 1st Oct 2010,

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Banerjee, Mr Abhishek
Authors: Banerjee, A., Taking, S., MacFarlane, D., Dabiran, A., and Wasige, E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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