High d/gamma Values in Diode Laser Structures for Very High Power

Petrescu-Prahova, I.B., Modak, P., Goutain, E., Silan, D., Bambrick, D., Riordan, J., Moritz, T., McDougall, S.D., Qui, B. and Marsh, J. (2009) High d/gamma Values in Diode Laser Structures for Very High Power. In: High-Power Diode Laser Technology and Applications VII, San Jose, CA, 26 January 2009, (doi: 10.1117/12.810041)

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Abstract

Record values for the rollover power and rollover linear power densities of 9xx nm devices, obtained by simultaneous scaling of length and d/Γ, are reported. The values for d/Γ lay in the range 0.8 μm to 1.2 μm with corresponding cavity lengths from 3.5 mm to 5 mm. The transversal structures were asymmetric, with a higher refractive index on the n side. An optical trap was helpful in reducing the radiation extension on the p side and the overall thickness. The highest rollover linear power densities were 244 mW/μm for structures without an optical trap and 290 mW/μm for those that included an optical trap.

Item Type:Conference Proceedings
Additional Information:Proc SPIE, vol. 7198 2009
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Petrescu-Prahova, I.B., Modak, P., Goutain, E., Silan, D., Bambrick, D., Riordan, J., Moritz, T., McDougall, S.D., Qui, B., and Marsh, J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Proceedings of SPIE--the International Society for Optical Engineering
ISSN:0277-786X

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