High Performance Visible Semiconductor Lasers Operating at 630 nm

Qui, B., Kowalski, O.P., McDougall, S.D., Schmidt, B. and Marsh, J. (2010) High Performance Visible Semiconductor Lasers Operating at 630 nm. In: Lasers and Electro-Optics, Conference on and Quantum Electronics and Laser Science Conference (CLEO/QELS), 2010, San Jose, CA, USA, 16-21 May,

Abstract

630 nm single mode lasers with a V-profile layer incorporated within the waveguide core exhibit reduced fast axis divergence (19° FWHM) while maintaining a low threshold current (30 mA), making them ideal for display applications.

• Item Type: Conference Proceedings
• Additional Information: isbn: 9781557528902
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Marsh, Professor John
• Authors: Qui, B., Kowalski, O.P., McDougall, S.D., Schmidt, B., and Marsh, J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering