High-performance visible semiconductor lasers operating at 630 nm

Qiu, B., Kowalski, O.P., McDougall, S., Schmidt, B. and Marsh, J. (2010) High-performance visible semiconductor lasers operating at 630 nm. IEEE Photonics Journal, 2(4), 563 -570. (doi: 10.1109/JPHOT.2010.2051022)

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Abstract

A tensile-strained InGaP quantum-well laser structure operating around 630 nm has been designed. The structure offers low threshold current and beam divergence (19° full-width at half-maximum (FWHM) or 34° at 1/e<sup>2</sup>) simultaneously by incorporating a V-profile layer within the waveguide. Single-mode lasers (630 nm) were fabricated and tested. The threshold current for coated 1-mm-long and 3-m-wide ridge lasers is only 30 mA, and the slope efficiency is 1.04 W/A. This level of performance makes the lasers ideal for display applications.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Qiu, B., Kowalski, O.P., McDougall, S., Schmidt, B., and Marsh, J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Journal
ISSN:1943-0655
Published Online:01 January 2010

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