Watling, J., Riddet, C., Chan, K. and Asenov, A. (2010) Simulation of hole-mobility in doped relaxed and strained Ge layers. Journal of Applied Physics, 108(9), 093715.
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Abstract
As silicon based metal-oxide-semiconductor field-effect transistors (MOSFETs) are reaching the limits of their performance with scaling, alternative channel materials are being considered to maintain performance in future complementary metal-oxide semiconductor technology generations. Thus there is renewed interest in employing Ge as a channel material in p-MOSFETs, due to the significant improvement in hole mobility as compared to Si. Here we employ full-band Monte Carlo to study hole transport properties in Ge. We present mobility and velocity-field characteristics for different transport directions in p-doped relaxed and strained Ge layers. The simulations are based on a method for over-coming the potentially large dynamic range of scattering rates, which results from the long-range nature of the unscreened Coulombic interaction. Our model for ionized impurity scattering includes the affects of dynamic Lindhard screening, coupled with phase-shift, and multi-ion corrections along with plasmon scattering. We show that all these effects play a role in determining the hole carrier transport in doped Ge layers and cannot be neglected
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Watling, Dr Jeremy and Asenov, Professor Asen and Riddet, Mr Craig |
Authors: | Watling, J., Riddet, C., Chan, K., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Journal of Applied Physics |
ISSN: | 0021-8979 |
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