Watling, J., Riddet, C., Chan, K. and Asenov, A. (2010) Simulation of hole-mobility in doped relaxed and strained Ge layers. In: European Materials Research Society (EMRS), Spring Meeting, Strasbourg, 2010,
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| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Watling, Dr Jeremy and Asenov, Professor Asen and Riddet, Mr Craig |
| Authors: | Watling, J., Riddet, C., Chan, K., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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