Markov, S., Shushko, P., Fiegna, C., Sangiorgi, E., Shluger, A. and Asenov, A. (2010) From ab initio properties of the Si-Si02 interface, to electrical characteristics of metal-oxide-semiconductor devices. Journal of Physics: Conference Series, 242(1), (doi: 10.1088/1742-6596/242/1/012010)
Full text not currently available from Enlighten.
Abstract
The gradual transition of the band-gap at the Si-SiO<sub>2</sub> interface affects quantisation and leakage characteristics of MOS inversion layer. We establish a link between first principles DFT simulations of the interface, and continuum simulations in the effective mass approximation, in order to obtain a realistic description of the band-gap transition for device modelling. The simplistic approach of obtaining real-space-dependent band-gap profile from the <i>ab initio</i> calculated electronic structure results in uncertainty of the simulated device characteristics. This uncertainty is small however, when compared to the magnitude of the simulated impact of the transition layer. A linear transition of the band-gap over 6 – 7 Å in the oxide approximates well the effects simulated with the realistic band-gap profile from DFT.
Item Type: | Articles |
---|---|
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Markov, Dr Stanislav and Asenov, Professor Asen |
Authors: | Markov, S., Shushko, P., Fiegna, C., Sangiorgi, E., Shluger, A., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Journal of Physics: Conference Series |
Journal Abbr.: | J. Phys. Conf. Ser. |
ISSN: | 1742-6588 |
ISSN (Online): | 1742-6596 |
Published Online: | 01 January 2010 |
University Staff: Request a correction | Enlighten Editors: Update this record