Low temperature effective mobility measurements and modelling of high-k gated Si n-MOS and p-MOS devices

Thomas, S.M., Prest, M.J., Whall, T.E., Beer, C.S., Leadley, D.R., Parker, E.H.C., Watling, J., Lander, R.J.P. and Vellianitis, G. (2010) Low temperature effective mobility measurements and modelling of high-k gated Si n-MOS and p-MOS devices. In: 11th International Conference on Ultimate Integration Silicon (ULIS), Glasgow, UK, 2010,

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Watling, Dr Jeremy
Authors: Thomas, S.M., Prest, M.J., Whall, T.E., Beer, C.S., Leadley, D.R., Parker, E.H.C., Watling, J., Lander, R.J.P., and Vellianitis, G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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