Electron velocity decline in Si nanoscale MOSFETs with the shortening of gate length

Islam, A., Benbakhti, B. and Kalna, K. (2010) Electron velocity decline in Si nanoscale MOSFETs with the shortening of gate length. In: II Workshop on Theory, Modelling and Computation Methods for Semiconductor Materials and Nanostructures, York, UK, 13-15 Jan 2010,

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Benbakhti, Dr Brahim and Kalna, Dr Karol
Authors: Islam, A., Benbakhti, B., and Kalna, K.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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