Phelan, R. et al. (2010) Room-temperature operation of discrete-mode InGaAs-AlAsSb Quantum-Cascade Laser With Emission at λ=3.3µm. IEEE Photonics Technology Letters, 22(17), pp. 1273-1275. (doi: 10.1109/LPT.2010.2053529)
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Publisher's URL: http://dx.doi.org/10.1109/LPT.2010.2053529
Abstract
Discrete-mode quantum-cascade lasers have been developed in the InGaAs-AlAsSb-InP materials system. For an uncoated 10-μ m-wide ridge waveguide and 3000-μm-long cavity, the laser had a threshold current density J<sub>th</sub> of 4.2 kA·cm<sup>-2</sup> (I<sub>th</sub>=1.5 A) at 300 K with a slope efficiency of 80 mW/A. A stable single-mode emission near 3.3 μ m with a sidemode suppression ratio of nearly 25 dB was observed and a tuning coefficient of 0.22 nm/K was obtained in the temperature range of 253 K <; T <; 303 K.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Ironside, Professor Charles and Slight, Dr Thomas |
| Authors: | Phelan, R., Slight, T., Kelly, B., O'Carroll, J., McKee, A., Revin, D., Zhang, S., Krysa, A., Kennedy, K., Cockburn, J., Ironside, C., Meredith, W., and O'Gorman, J. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Photonics Technology Letters |
| ISSN: | 1041-1135 |
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