Understanding LER-induced MOSFET VT variability - part II: reconstructing the distribution

Reid, D., Millar, C., Roy, S. and Asenov, A. (2010) Understanding LER-induced MOSFET VT variability - part II: reconstructing the distribution. IEEE Transactions on Electron Devices, 57(11), pp. 2808-2813. (doi: 10.1109/TED.2010.2067732)

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In this paper, we examine, in more detail, the strong correlation between the distribution of threshold voltage (VT) and the average channel length (L̅C̅) discovered in Part I of this paper. Based on the results of statistical analysis, we investigate an approach whereby the line-edge-roughness (LER)-induced distribution of VT can be reconstructed based on the convolution of the distribution of (L̅C̅) and the subdistributions of VT at particular values of (L̅C̅). Further analysis demonstrates that the actual shape of the subdistributions has little impact on the accuracy of the reconstruction. This result allows a fast and economical semianalytical approach for the simulation of LER-induced VT variability, based on the nonlinear transformation of the distribution of (L̅C̅) into the distribution of VT using the channel length dependence of the threshold voltage as a mapping function. The accuracy of the semianalytical approach has been confirmed by comparison with the distributions of VT obtained for a broad range of conventional and novel MOSFETs using comprehensive 3-D simulations.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Millar, Dr Campbell and Roy, Professor Scott and Asenov, Professor Asen
Authors: Reid, D., Millar, C., Roy, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
Publisher:Institute of Electrical and Electronics Engineers

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