Javaloyes, J. and Balle, S. (2009) Emission directionality of semiconductor ring lasers: a traveling-wave description. IEEE Journal of Quantum Electronics, 45(5-6), pp. 431-438. (doi: 10.1109/JQE.2009.2014079)
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Publisher's URL: http://dx.doi.org/10.1109/JQE.2009.2014079
Abstract
We use a traveling-wave model for explaining the experimentally observed changes in the directionality of the emission of semiconductor ring lasers and its different behavior when current is increased or decreased. The modulation of the cavity losses imposed by the light extraction sections together with the thermal shift of the gain spectrum and spatial hole burning in the carrier density play a crucial role in the directionality of the emission and its changes with operation current. The differences as the current is increased or decreased correspond to the different role played by spatial hole burning
Item Type: | Articles |
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Keywords: | Behavior Cavity Coupled cavities Density DYNAMICS EMISSION extraction GAIN LASER lasers light model modulation operation Q-SWITCHED LASERS REFRACTIVE-INDEX ring lasers SECTIONS semiconductor semiconductor lasers Semiconductor ring laser SEMICONDUCTOR RING LASERS spectra thermal effects time traveling-wave modeling |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Javaloyes, Dr Julien |
Authors: | Javaloyes, J., and Balle, S. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Journal of Quantum Electronics |
Publisher: | IEEE |
ISSN: | 0018-9197 |
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