1 μm gate length, In_0.75Ga_0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737μS/μm

Hill, R.J.W. et al. (2008) 1 μm gate length, In_0.75Ga_0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737μS/μm. Electronics Letters, 44, pp. 498-500. (doi: 10.1049/el:20080470)

Abstract

The first demonstration of implant-free, flatband-mode In_0.75Ga_0.25As channel n-MOSFETs is reported. These 1 μm gate length MOSFETs, fabricated on a structure with average mobility of 7720 cm²/Vs and sheet carrier concentration of 3.3×10¹² cm^-22, utilise a Pt gate, a high-k dielectric (k≈20), and a δ-doped InAlAs/InGaAs/InAlAs heterostructure. The devices have a typical maximum drive current (I_d,sat) of 933 μA/μm, extrinsic transconductance (g_m) of 737 μS/μm, gate leakage (I_g) of 40 pA, and on-resistance (R_on) of 555 Ωμm. The g_m and R_on figures of merit are the best reported to date for any III-V MOSFET.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Zhou, Dr Haiping and Thayne, Prof Iain and Thoms, Dr Stephen and Moran, Professor David and Li, Dr Xu and Macintyre, Dr Douglas and Asenov, Professor Asen
• Authors: Hill, R.J.W., Droopad, R., Moran, D.A.J., Li, X., Zhou, H., Macintyre, D., Thoms, S., Ignatova, O., Asenov, A., Rajagopalan, K., Fejes, P., Thayne, I.G., and Passlack, M.
• Subjects: Q Science > QC Physics; T Technology > T Technology (General)
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Electronics Letters
• Publisher: The Institution of Engineering & Technology
• ISSN: 0013-5194
• ISSN (Online): 1350-911X
• Copyright Holders: Copyright © 2008 Institution of Engineering and Technology
• First Published: First published in Electronics Letters 44:498-500
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher.

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
45248	1	Silicon compatible process modules for III-V electronic devices.	Iain Thayne	Engineering & Physical Sciences Research Council (EPSRC)	EP/F002610/1	ENG - ENGINEERING ELECTRONICS & NANO ENG