Impact of Random Dopant Induced Statistical Variability on Inverter Switching Trajectories and Timing Variability

Kamsani, N.A., Cheng, B.J., Roy, S. and Asenov, A. (2009) Impact of Random Dopant Induced Statistical Variability on Inverter Switching Trajectories and Timing Variability. In: ISCAS: IEEE International Symposium on Circuits and Systems, 2009, pp. 577-580.

Abstract

In this paper we study the effect of statistical variability introduced by random discrete dopants on the dynamic behaviour of an inverter at the 45nm technology generation using statistical circuit simulation. The impact of the variability on switching trajectories and propagation delay are studied using an inverter chain with differing Fan-Out/Fan-In (FO/FI) ratios

• Item Type: Conference Proceedings
• Keywords: circuit simulation, CMOS, DELAY, device, generation, impact, intrinsic parameter fluctuations, MOSFETS, ratio, simulation, statistical variability, system, technologies, technology, variability
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Cheng, Dr Binjie and Roy, Professor Scott and Asenov, Professor Asen
• Authors: Kamsani, N.A., Cheng, B.J., Roy, S., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering