Perturbative vs non-perturbative impurity scattering in a narrow Si nanowire GAA transistor: A NEGF study

Martinez, A., Brown, A.R., Seoane, N. and Asenov, A. (2009) Perturbative vs non-perturbative impurity scattering in a narrow Si nanowire GAA transistor: A NEGF study. Journal of Physics: Conference Series, 193(1), (doi: 10.1088/1742-6596/193/1/012047)

Abstract

In this paper we study the effect of impurity scattering on the performance of a Si gate-all-around nanowire transistors. The non-equilibrium Green function formalism is used in order to describe the carrier transport. Impurity scattering is introduced using two different formalisms, one that considers the impurity potential as a small perturbation by introducing self energies and the other in which the impurity potential is described exactly by included the impurity potential through the Poisson equation. The non-perturbative method does not use a fitting parameter but the perturbative one uses a phenomenological constant that can be calibrated to match the result of the non-perturbative method. We confirm Ohms-law-type behaviour by using the perturbative approach for larger channel lengths

• Item Type: Articles
• Keywords: channel DYNAMICS energy IMPURITY performance physics SCATTERING semiconductor si transistor transistors
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Brown, Mr Andrew and Asenov, Professor Asen and Martinez, Dr Antonio
• Authors: Martinez, A., Brown, A.R., Seoane, N., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Journal of Physics: Conference Series
• ISSN: 1742-6588
• ISSN (Online): 1742-6596
• ISBN: 1742-6588