Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes

Aldegunde, M., Seoane, N., Garcia-Loureiro, A.J. and Kalna, K. (2010) Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes. Computer Physics Communications, 181(1), pp. 24-34. (doi: 10.1016/j.cpc.2009.08.013)

Abstract

When using an unstructured mesh for device geometry, the ensemble Monte Carlo simulations of semiconductor devices may be affected by unwanted self-forces resulting from the particle-mesh coupling. We report on the progress in minimisation of the self-forces on arbitrary meshes by showing that they can be greatly reduced on a finite element mesh with proper interpolation functions. The developed methodology is included into a self-consistent finite element 3D Monte Carlo device simulator. Minimising of the self-forces using the proper interpolation functions is tested by simulating the electron transport in a 10 nm gate length, 6.1 nm body thick, double gate metal-oxide-semiconductor field-effect transistor (MOSFET). We demonstrate the reduction in the self-force and illustrate the practical distinction by showing I-V characteristics for the device.

• Item Type: Articles
• Keywords: device devices ELECTRON-TRANSPORT Finite element method Monte Carlo simulation MOSFET MOSFETS Particle-mesh coupling Self-forces semiconductor Semiconductor devices simulation transistor TRANSPORT
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Kalna, Dr Karol
• Authors: Aldegunde, M., Seoane, N., Garcia-Loureiro, A.J., and Kalna, K.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Computer Physics Communications
• ISSN: 0010-4655