Bourgin, Y. et al. (2010) 100 nm period grating by high-index phase-mask immersion lithography. Optics Express, 18(10), pp. 10557-10566. (doi: 10.1364/OE.18.010557)
Full text not currently available from Enlighten.
Abstract
The interferogram of a high index phase mask of 200 nm period under normal incidence of a collimated beam at 244 nm wavelength with substantially suppressed zeroth order produces a 100 nm period grating in a resist film under immersion. The paper describes the phase mask design, its fabrication, the effect of electron-beam lithographic stitching errors and optical assessment of the fabricated sub-cutoff grating.
Item Type: | Articles |
---|---|
Keywords: | Arrays Design Electron beam fabrication INTERFERENCE LITHOGRAPHY lithography MIRRORS optical resist |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | De La Rue, Professor Richard |
Authors: | Bourgin, Y., Jourlin, Y., Parriaux, O., Talneau, A., Tonchev, S., Veillas, C., Karvinen, P., Passilly, N., Zain, A.R.M., De La Rue, R.M., Van Erps, J., and Troadec, D. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Optics Express |
Publisher: | Optical Society of America |
ISSN: | 1094-4087 |
ISSN (Online): | 1094-4087 |
University Staff: Request a correction | Enlighten Editors: Update this record