100 nm period grating by high-index phase-mask immersion lithography

Bourgin, Y. et al. (2010) 100 nm period grating by high-index phase-mask immersion lithography. Optics Express, 18(10), pp. 10557-10566. (doi:10.1364/OE.18.010557)

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The interferogram of a high index phase mask of 200 nm period under normal incidence of a collimated beam at 244 nm wavelength with substantially suppressed zeroth order produces a 100 nm period grating in a resist film under immersion. The paper describes the phase mask design, its fabrication, the effect of electron-beam lithographic stitching errors and optical assessment of the fabricated sub-cutoff grating.

Item Type:Articles
Keywords:Arrays Design Electron beam fabrication INTERFERENCE LITHOGRAPHY lithography MIRRORS optical resist
Glasgow Author(s) Enlighten ID:De La Rue, Professor Richard
Authors: Bourgin, Y., Jourlin, Y., Parriaux, O., Talneau, A., Tonchev, S., Veillas, C., Karvinen, P., Passilly, N., Zain, A.R.M., De La Rue, R.M., Van Erps, J., and Troadec, D.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Optics Express
Publisher:Optical Society of America
ISSN (Online):1094-4087

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