160-GHz passively mode-locked AlGaInAs 1.55-mu m strained quantum-well compound cavity laser

Hou, L.P. , Stolarz, P., Dylewicz, R., Haji, M., Javaloyes, J., Qiu, B.C. and Bryce, A.C. (2010) 160-GHz passively mode-locked AlGaInAs 1.55-mu m strained quantum-well compound cavity laser. IEEE Photonics Technology Letters, 22(10), pp. 727-729. (doi: 10.1109/LPT.2010.2045228)

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Publisher's URL: http://dx.doi.org/10.1109/LPT.2010.2045228

Abstract

The first demonstration of harmonic mode-locked operation from a monolithic semiconductor laser comprising a compound cavity formed by twin deeply etched intracavity reflectors based on 1.55-mu m AlGaInAs strained quantum-well material is presented. Nearly transform-limited Gaussian pulses are generated at 160-GHz repetition rate with a 1.67-ps pulse duration

Item Type:Articles
Keywords:AlGaInAs compound cavity DIODES harmonic mode-locked laser (MLL) inductively coupled plasma (ICP) deep etching LASER LOCKING PULSE GENERATION REFLECTORS semiconductor strained quantum well
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Dylewicz, Dr Rafal and Bryce, Prof Ann and Hou, Dr Lianping and Javaloyes, Dr Julien and Stolarz, Mr Piotr and Haji, Dr Mohsin
Authors: Hou, L.P., Stolarz, P., Dylewicz, R., Haji, M., Javaloyes, J., Qiu, B.C., and Bryce, A.C.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Technology Letters
Publisher:Institute of Electrical and Electronics Engineers
ISSN:1041-1135
ISSN (Online):1941-0174
Published Online:18 March 2010

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
453111High power, high frequency mode-locked semiconductor lasersAnn BryceEngineering & Physical Sciences Research Council (EPSRC)EP/E065112/1Electronic and Nanoscale Engineering