Hou, L.P. , Stolarz, P., Dylewicz, R., Haji, M., Javaloyes, J., Qiu, B.C. and Bryce, A.C. (2010) 160-GHz passively mode-locked AlGaInAs 1.55-mu m strained quantum-well compound cavity laser. IEEE Photonics Technology Letters, 22(10), pp. 727-729. (doi: 10.1109/LPT.2010.2045228)
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Publisher's URL: http://dx.doi.org/10.1109/LPT.2010.2045228
Abstract
The first demonstration of harmonic mode-locked operation from a monolithic semiconductor laser comprising a compound cavity formed by twin deeply etched intracavity reflectors based on 1.55-mu m AlGaInAs strained quantum-well material is presented. Nearly transform-limited Gaussian pulses are generated at 160-GHz repetition rate with a 1.67-ps pulse duration
Item Type: | Articles |
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Keywords: | AlGaInAs compound cavity DIODES harmonic mode-locked laser (MLL) inductively coupled plasma (ICP) deep etching LASER LOCKING PULSE GENERATION REFLECTORS semiconductor strained quantum well |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Dylewicz, Dr Rafal and Bryce, Prof Ann and Hou, Dr Lianping and Javaloyes, Dr Julien and Stolarz, Mr Piotr and Haji, Dr Mohsin |
Authors: | Hou, L.P., Stolarz, P., Dylewicz, R., Haji, M., Javaloyes, J., Qiu, B.C., and Bryce, A.C. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Photonics Technology Letters |
Publisher: | Institute of Electrical and Electronics Engineers |
ISSN: | 1041-1135 |
ISSN (Online): | 1941-0174 |
Published Online: | 18 March 2010 |
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