Mode-locking in semiconductor Fabry-Perot lasers

Javaloyes, J. and Balle, S. (2010) Mode-locking in semiconductor Fabry-Perot lasers. IEEE Journal of Quantum Electronics, 46(7), pp. 1023-1030. (doi: 10.1109/JQE.2010.2042792)

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Publisher's URL: http://dx.doi.org/10.1109/JQE.2010.2042792

Abstract

We theoretically study the dynamics and the mode-locking properties of semiconductor Fabry-Perot lasers with intracavity saturable absorber by using a travelling-wave model and a time-domain description of the optical response of the semiconductor materials. Our description enables us to incorporate important features as for instance the abrupt spectral variations of the absorption in the saturable absorber. We analyze the influence of several key parameters that affect the stability of the mode-locking regime and show that this modelling approach can be used, upon proper fitting of the material parameters, for optimization of the design of semiconductor mode-locked lasers

Item Type:Articles
Keywords:Absorption AMPLIFIERS Design DIODES DYNAMICS EMISSION EQUATIONS GAIN LASER lasers Mode locked lasers Mode-locked laser MODE-LOCKING model optical OPTIMIZATION parameters REFRACTIVE-INDEX saturable absorber semiconductor semiconductor lasers STABILITY travelling-wave modelling
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Javaloyes, Dr Julien
Authors: Javaloyes, J., and Balle, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Journal of Quantum Electronics
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0018-9197
ISSN (Online):1558-1713
Published Online:29 March 2010

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
453111High power, high frequency mode-locked semiconductor lasersAnn BryceEngineering & Physical Sciences Research Council (EPSRC)EP/E065112/1Electronic and Nanoscale Engineering