Zhuang, Q.D., Krier, A. and Stanley, C.R. (2007) Strain enhancement during annealing of GaAsN alloys. Journal of Applied Physics, 101(10), p. 103536.
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Publisher's URL: http://link.aip.org/link/?JAPIAU/101/103536/1
Abstract
We have investigated the effect of rapid thermal annealing (RTA) on the optical and structural properties of GaAsN alloys using photoluminescence (PL) and double-crystal x-ray diffraction. We observe a significant anomalous strain enhancement during RTA and a blueshift of the PL peak energy accompanied by a reduction in the emission linewidth. The PL features are attributed to an improvement in the homogeneity of the alloy, and the strain enhancement reflects a change in N-related complexes during annealing. Based on a defect model, an interstitial nitrogen concentration of 1.8×1019 cm−3 is deduced prior to annealing.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Stanley, Professor Colin |
| Authors: | Zhuang, Q.D., Krier, A., and Stanley, C.R. |
| Subjects: | Q Science > QC Physics |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering University Centres > Glasgow Materials Research Initiative |
| Journal Name: | Journal of Applied Physics |
| ISSN: | 0021-8979 |
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