Elgaid, K., Moran, D., McLelland, H., Holland, M. and Thayne, I.G. (2005) Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency fT of 440 GHz for millimeterwave imaging receivers applications. In: IEEE International Conference on Indium Phosphide and Related Materials, 2005, Glasgow, Scotland, 8-12 May 2005, pp. 141-143. ISBN 0780388917 (doi: 10.1109/ICIPRM.2005.1517439)
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Publisher's URL: http://dx.doi.org/10.1109/ICIPRM.2005.1517439
Abstract
The 50 nm m-HEMT exhibits extremely high f<sub>T</sub>, of 440GHz, low F<sub>min</sub> of 0.7 dB, associated gain of 13 dB at 26 GHz with an exceptionally high Id of 200 mA/mm and gm of 950 ms/mm at low noise biased point.
Item Type: | Conference Proceedings |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Moran, Professor David and Elgaid, Dr Khaled |
Authors: | Elgaid, K., Moran, D., McLelland, H., Holland, M., and Thayne, I.G. |
Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Publisher: | IEEE |
ISSN: | 1092-8669 |
ISBN: | 0780388917 |
Copyright Holders: | Copyright © 2005 IEEE |
First Published: | First published in 2005 IEEE International Conference on Indium Phosphide and Related Materials |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher. |
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