Boyd, E., Zhou, H., McLelland, H., Moran, D.A.J., Thoms, S. and Thayne, I.G. (2004) Fabrication of 30nm T-gate high electron mobility transistors using a bi-Layer of PMMA and UVIII. In: 2004 IEEE Conference on Optoelectronic and Microelectronic Materials and Devices, Brisbane, Australia, 8-10 December 2004, pp. 25-28. ISBN 0780388208 (doi: 10.1109/COMMAD.2004.1577483)
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Publisher's URL: http://dx.doi.org/10.1109/COMMAD.2004.1577483
Abstract
This work reports on the development and fabrication of High Electron Mobility Transistors with a gate length of less than 30nm. The T-shaped gates were realized using a two-stage "bi-lithography" process that creates a T-shaped image in a bilayer of PMMA and UVIII. This is then transferred into SiO<sub>2</sub> gate support layer by a low damage dry-etch process. This method enables the fabrication of mechanically robust, ultra short T-gates to be realised.
Item Type: | Conference Proceedings |
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Keywords: | HEMT, T-gate, bi-layer, UVIII, lithography. |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Zhou, Dr Haiping and Thayne, Prof Iain and McLelland, Mrs Helen and Thoms, Dr Stephen and Moran, Professor David |
Authors: | Boyd, E., Zhou, H., McLelland, H., Moran, D.A.J., Thoms, S., and Thayne, I.G. |
Subjects: | T Technology > T Technology (General) |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Publisher: | IEEE |
ISBN: | 0780388208 |
Copyright Holders: | Copyright © 2004 IEEE |
First Published: | First published in 2004 IEEE Conference on Optoelectronic and Microelectronic Materials and Devices |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher. |
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