Enhancement Mode n-MOSFET with High-κ Dielectric on GaAs Substrate

Rajagopalan, K. et al. (2007) Enhancement Mode n-MOSFET with High-κ Dielectric on GaAs Substrate. In: IEEE 65th Annual Device Research Conference, South Bend, Indiana, USA, 18-20 June 2007, pp. 205-206. ISBN 9781424411023 (doi: 10.1109/DRC.2007.4373719)



Publisher's URL: http://dx.doi.org/10.1109/DRC.2007.4373719


In this paper, we report MOS heterostructures grown by molecular beam epitaxy on III-V substrates, employing a high-κ dielectric stack comprised of gallium oxide and gadolinium gallium oxide. Mobilities exceeding 12,000 and 6,000 cm2/Vs, for sheet carrier concentration ns of about 2.5x1012 cm-2 were measured on MOSFET structures on InP and GaAs substrates, respectively. These structures were designed for enhancement mode operation and include a 10 nm thick strained InGa1-xAs channel layer with In mole fraction x of 0.3 and 0.75 on GaAs and InP substrates, respectively.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Zhou, Dr Haiping and Thayne, Prof Iain and Thoms, Dr Stephen and Moran, Professor David and Li, Dr Xu
Authors: Rajagopalan, K., Zurcher, P., Abrokwah, J., Droopad, R., Moran, D.A.J., Hill, R.J.W., Li, X., Zhou, H., McIntyre, D., Thoms, S., Thayne, I.G., and Passlack, M.
Subjects:T Technology > T Technology (General)
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2007 IEEE
First Published:First published in IEEE 65th Annual Device Research Conference
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.

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