Simple design for the transportation of ex situ prepared hydrogen passivated silicon

MacLaren, D.A. , Curson, N.J., Atkinson, P., Holst, B., Johnson, D.J. and Allison, W. (2002) Simple design for the transportation of ex situ prepared hydrogen passivated silicon. Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 20(1), pp. 285-287. (doi: 10.1116/1.1419084)

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Publisher's URL: http://dx.doi.org/10.1116/1.1419084

Abstract

We present a design for a simple, reliable, and robust storage container suitable for the transportation of silicon crystals between clean room and experiment after hydrogen passivation by a "wet-chemical" process. The container stores the crystal in an inert atmosphere that is depleted of the water and oxygen responsible for surface oxidation. An atomic-force microscopy study of the surfaces of stored crystals confirmed that the storage method was successful and that surface oxidation can be impeded for at least 24 h. Our design is also suitable for the storage of other systems that degrade under atmospheric conditions.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:MacLaren, Professor Donald
Authors: MacLaren, D.A., Curson, N.J., Atkinson, P., Holst, B., Johnson, D.J., and Allison, W.
Subjects:T Technology > TJ Mechanical engineering and machinery
College/School:College of Science and Engineering > School of Physics and Astronomy
University Centres > Glasgow Materials Research Initiative
Journal Name:Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films
ISSN:1553-1813
ISSN (Online):1944-2807

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