InGaAsP/InP strained MQW laser with integrated mode size converter using the shadow masked growth technique

Moerman, I., Vanderbauwhede, W. , D'Hondt, M., Van Daele, P., Demeester, P. and Hunziker, W. (1995) InGaAsP/InP strained MQW laser with integrated mode size converter using the shadow masked growth technique. In: Seventh International Conference on Indium Phosphide and Related Materials, 9-13 May 1995, Hokkaido, Japan. IEEE Computer Society: Piscataway, N.J., USA, pp. 717-720. ISBN 9780780321472 (doi: 10.1109/ICIPRM.1995.522244)

Abstract

We have successfully integrated a mode size converter with a PBH strained MQW InGaAsP/InP laser diode using the SMG technique. The laser performance is hardly affected by the taper integration. Due to the taper, the coupling loss to a cleaved fibre is reduced from 9.3 dB for a non-tapered laser to 3.3 dB for a laser with a 200 μm taper.

• Item Type: Book Sections
• Status: Published
• Glasgow Author(s) Enlighten ID: Vanderbauwhede, Professor Wim
• Authors: Moerman, I., Vanderbauwhede, W., D'Hondt, M., Van Daele, P., Demeester, P., and Hunziker, W.
• Subjects: T Technology > T Technology (General)
• College/School: College of Science and Engineering > School of Computing Science
• Publisher: IEEE Computer Society
• ISBN: 9780780321472