Elgaid, K., McLelland, H., Holland, M., Moran, D.A.J., Stanley, C.R. and Thayne, I.G. (2005) 50-nm T-gate metamorphic GaAs HEMTs with fT of 440 GHz and noise figure of 0.7 dB at 26 GHz. IEEE Electron Device Letters, 26(11), pp. 784-786. (doi: 10.1109/LED.2005.857716)
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Publisher's URL: http://dx.doi.org/10.1109/LED.2005.857716
Abstract
GaAs-based transistors with the highest f/sub T/ and lowest noise figure reported to date are presented in this letter. A 50-nm T-gate In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As metamorphic high-electron mobility transistors (mHEMTs) on a GaAs substrate show f/sub T/ of 440 GHz, f/sub max/ of 400 GHz, a minimum noise figure of 0.7 dB and an associated gain of 13 dB at 26 GHz, the latter at a drain current of 185 mA/mm and g/sub m/ of 950 mS/mm. In addition, a noise figure of below 1.2 dB with 10.5 dB or higher associated gain at 26 GHz was demonstrated for drain currents in the range 40 to 470 mA/mm at a drain bias of 0.8 V. These devices are ideal for low noise and medium power applications at millimeter-wave frequencies.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Stanley, Professor Colin and Moran, Professor David and Elgaid, Dr Khaled |
Authors: | Elgaid, K., McLelland, H., Holland, M., Moran, D.A.J., Stanley, C.R., and Thayne, I.G. |
Subjects: | Q Science > QC Physics |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering University Centres > Glasgow Materials Research Initiative |
Journal Name: | IEEE Electron Device Letters |
Publisher: | Institute of Electrical and Electronics Engineers |
ISSN: | 0741-3106 |
ISSN (Online): | 1558-0563 |
Copyright Holders: | Copyright © 2005 Institute of Electrical and Electronics Engineers (IEEE) |
First Published: | First published in IEEE Electron Device Letters 26(11):784-786 |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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