Coêlho, I.J.S., Martins-Filho, J.F., Figueiredo, J.M.L. and Ironside, C.N. (2004) Modeling of light-sensitive resonant-tunneling-diode devices. Journal of Applied Physics, 95, pp. 8258-8263. (doi: 10.1063/1.1728290)
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Publisher's URL: http://dx.doi.org/10.1063/1.1728290
Abstract
We present a method to include the effects of light excitation on two different models of resonant-tunneling-diode-based devices. Our approach takes into account both photoconductive and charge accumulation effects responsible for shifting the static I–V curve when the structure is under light excitation. Computational simulations led to good agreement between the model and experimental results.
| Item Type: | Articles |
|---|---|
| Keywords: | resonant tunnelling diodes, photoconducting devices, semiconductor device models |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Ironside, Professor Charles |
| Authors: | Coêlho, I.J.S., Martins-Filho, J.F., Figueiredo, J.M.L., and Ironside, C.N. |
| Subjects: | Q Science > QC Physics |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering University Centres > Glasgow Materials Research Initiative |
| Journal Name: | Journal of Applied Physics |
| ISSN: | 0021-8979 |
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