3D monte carlo simulation of tri-gate MOSFETs using tetrahedral finite elements

Aldegunde, M., Garcia-Loureiro, A.J., Martinez, A. and Kalna, K. (2008) 3D monte carlo simulation of tri-gate MOSFETs using tetrahedral finite elements. In: International Conference on Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. IEEE, pp. 153-156. ISBN 9781424417537 (doi: 10.1109/SISPAD.2008.4648260)

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Item Type:Book Sections
Status:Published
Glasgow Author(s) Enlighten ID:Kalna, Dr Karol
Authors: Aldegunde, M., Garcia-Loureiro, A.J., Martinez, A., and Kalna, K.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE
ISBN:9781424417537

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