Aldegunde, M., Garcia-Loureiro, A.J., Martinez, A. and Kalna, K. (2008) 3D monte carlo simulation of tri-gate MOSFETs using tetrahedral finite elements. In: International Conference on Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. IEEE, pp. 153-156. ISBN 9781424417537 (doi: 10.1109/SISPAD.2008.4648260)
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Item Type: | Book Sections |
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Status: | Published |
Glasgow Author(s) Enlighten ID: | Kalna, Dr Karol |
Authors: | Aldegunde, M., Garcia-Loureiro, A.J., Martinez, A., and Kalna, K. |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Publisher: | IEEE |
ISBN: | 9781424417537 |
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