Statistical variations in 32nm thin-body SOI devices and SRAM cells

Cheng, B., Roy, S., Brown, A.R., Millar, C. and Asenov, A. (2008) Statistical variations in 32nm thin-body SOI devices and SRAM cells. In: 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. IEEE, pp. 389-392. ISBN 9781424421855 (doi: 10.1109/ICSICT.2008.4734546)

Abstract

Based on 3D statistical device simulation, the impacts of key statistical variability (SV) sources (in both individual and combined forms) on device characteristics are studied in detail for a 32 nm thin-body SOI technology. The corresponding impacts on SRAM cell stability are presented as well. The simulation results indicate that thin body architectures are not only resistant to random discreet dopant induced variation, but also less sensitive to length edge roughness induced variation.

• Item Type: Book Sections
• Status: Published
• Glasgow Author(s) Enlighten ID: Millar, Dr Campbell and Brown, Mr Andrew and Cheng, Dr Binjie and Roy, Professor Scott and Asenov, Professor Asen
• Authors: Cheng, B., Roy, S., Brown, A.R., Millar, C., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Publisher: IEEE
• ISBN: 9781424421855