Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics

Hill, R.J.W., Moran, D.A.J. , Li, X. , Zhou, H., Macintyre, D.S., Thoms, S. , Asenov, A. and Thayne, I.G. (2008) Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics. In: Proceedings of the IEEE Silicon Nanoelectronics Workshop, 15-16 June 2008, Honolulu, Hawaii. IEEE Computer Society: Piscataway, N.J., USA. ISBN 9781424420711 (doi: 10.1109/SNW.2008.5418447)

Abstract

There is a growing belief that strained silicon alone may not be able to deliver sufficient performance beyond the 22nm technology generation of the International Technology Roadmap for Semiconductors (ITRS), and that high mobility channel materials may be required. This view has led to the establishment of various collaborations to explore the potential of high mobility III-V semiconductors, particularly for n-MOSFET realisation, such as the SRC Non Classical CMOS Research Center in the US and the DualLogic project in Europe. This paper describes the first results from flatband-mode (FB) In0.75Ga0.25As channel nMOSFETs which have highly encouraging performance metrics.

• Item Type: Book Sections
• Status: Published
• Glasgow Author(s) Enlighten ID: Zhou, Dr Haiping and Thayne, Prof Iain and Thoms, Dr Stephen and Hill, Mr Richard and Moran, Professor David and Li, Dr Xu and Macintyre, Dr Douglas and Asenov, Professor Asen
• Authors: Hill, R.J.W., Moran, D.A.J., Li, X., Zhou, H., Macintyre, D.S., Thoms, S., Asenov, A., and Thayne, I.G.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering; College of Science and Engineering > School of Engineering > James Watt Nanofabrication Centre
• Publisher: IEEE Computer Society
• ISBN: 9781424420711