Statistical circuit simulation with supply-voltage scaling in nanometre MOSFET devices under the influence of random dopant fluctuations

Kamsani, N.A., Cheng, B., Roy, S. and Asenov, A. (2008) Statistical circuit simulation with supply-voltage scaling in nanometre MOSFET devices under the influence of random dopant fluctuations. In: Faible Tension Faible Consommation (FTFC) 2008, Louvain La Neuve, Belgium, 26-28 May 2008, pp. 95-99.

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Cheng, Dr Binjie and Roy, Professor Scott and Asenov, Professor Asen
Authors: Kamsani, N.A., Cheng, B., Roy, S., and Asenov, A.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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