Burt, D. P., Dobson, P. S. , Donaldson, L. and Weaver, J. M. R. (2008) A simple method for high yield fabrication of sharp silicon tips. Microelectronic Engineering, 85(3), pp. 625-630. (doi: 10.1016/j.mee.2007.11.010)
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Abstract
A simple, high yield, method for the fabrication of sharp silicon tips is described. A triangular etch mask design is used to ensure that the tip forms with a single point. An anisotropic wet etch gives rise to a tip that continues to "self-sharpen" after the etch mask is released. The tip geometry comprises three converging {1 1 3} planes towards the apex with {3 1 3} planes forming at the base. The apex of each tip typically has a radius of curvature of <5 nm, which can be reduced to <2 nm by a subsequent oxide sharpening process. Tips of this kind have been successfully integrated into the fabrication of atomic force microscopy probes.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Burt, Dr David and Weaver, Professor Jonathan and Dobson, Dr Phil and Donaldson, Mrs Lesley |
Authors: | Burt, D. P., Dobson, P. S., Donaldson, L., and Weaver, J. M. R. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Microelectronic Engineering |
ISSN: | 0167-9317 |
ISSN (Online): | 1873-5568 |
Published Online: | 03 December 2007 |
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